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Submitted Manuscripts
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Original Publications of Prof. Dr. Daniel Hägele
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Original Publications of Dr. Jörg Rudolph
Submitted Manuscripts
Original Publications of Prof. Dr. Daniel Hägele
2011
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele,
Phys. Rev. B
84,
153202
(2011)
Long room-temperature electron spin lifetimes in bulk cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Proc. SPIE
7937,
793711
(2011)
2010
Two-dimensional higher order noise spectroscopy up to radio frequencies,
S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele,
Rev. Sci. Instr.
81,
125101
(2010)
Long room-temperature electron spin lifetimes in highly doped cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Appl. Phys. Lett.
97,
062101
(2010)
Temperature dependence of electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Phys. Rev. B
81,
155216
(2010)
2009
Anisotropic electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Appl. Phys. Lett.
95,
192107
(2009)
Towards Bose-Einstein condensation of semiconductor excitons: The biexciton polarization effect,
D. Hägele, S. Pfalz and M. Oestreich,
Phys. Rev. Lett.
103,
146402
(2009)
Temperature-dependent electron Landé g factor and the interband matrix element of GaAs,
J. Hübner, S. Döhrmann, D. Hägele and M. Oestreich,
Phys. Rev. B
79,
193307
(2009)
Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan and D. S. Chemla,
Phys. Rev. B
79,
045320
(2009)
2008
Ultrafast Spin Noise Spectroscopy,
S. Starosielec and D. Hägele,
Appl. Phys. Lett.
93,
051116
(2008)
Ultrafast THz spectroscopy of excitons in multi-component carrier gases,
R. A. Kaindl, M. A. Carnahan, D. Hägele and D. S. Chemla,
Advances in Solid State Physics
47,
191
(2008)
2007
Proof of the cases p ≤ 7 of the Lieb-Seiringer formulation of the Bessis-Moussa-Villani conjecture,
D. Hägele,
J. Stat. Phys.
127,
1167
(2007)
Applications of ultrafast terahertz pulses for intra-excitonic spectroscopy of quasi-2D electron-hole gases,
R. A. Kaindl, M. A. Carnahan, D. Hagele, and D.S. Chemla,
J. Nanoelectron. Optoelectron.
2,
83
(2007)
2006
Comment on "Electrically injected spin-polarized vertical-cavity surface-emitting lasers [Appl. Phys. Lett. 87, 091108 (2005)]",
D. Hägele and M. Oestreich,
Appl. Phys. Lett.
88,
056101
(2006)
Ultrafast THz spectroscopy of correlated electrons: from excitons to Cooper pairs,
R. A. Kaindl, R. Huber, B. A. Schmidt, M. A. Carnahan, D. Hägele, and D. S. Chemla,
Phys. Stat. Solidi (b)
243,
2414
(2006)
2005
Room temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,
J. Rudolph, S. Döhrmann, D. Hägele, W. Stolz, and M. Oestreich,
Appl. Phys. Lett.
87,
241117
(2005)
Electron Spin Relaxation in Semiconductors,
D. Hägele, S. Döhrmann, J. Rudolph and M. Oestreich,
Advances in Solid State Physics
45,
253
(2005)
Spin noise spectroscopy in GaAs,
M. Oestreich, M. Römer, R. J. Haug, and D. Hägele,
Phys. Rev. Lett.
95,
216603
(2005)
Optical orientation of electron spins in GaAs quantum wells,
S. Pfalz, R. Winkler, T. Nowitzki, D. Reuter, A. D. Wieck, D. Hägele, and M. Oestreich,
Phys. Rev. B
71,
165305
(2005)
Signatures of stimulated bosonic exciton-scattering in semiconductor luminescence,
D. Hägele, S. Pfalz, and M. Oestreich,
Solid State Comm.
134,
171
(2005)
Design considerations for semiconductor spin lasers,
M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele,
Superlattices and Microstructures
37,
306
(2005)
(invited)
2004
Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,
S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich,
Phys. Rev. Lett.
93,
147405
(2004)
Terahertz probes of transient conducting and insulating phases in quasi-2D electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla,
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics
2004,
503
(2004)
2003
Circular photogalvanic effect at interband excitation in semiconductor quantum wells,
V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl,
Solid State Comm.
123,
283
(2003)
Laser threshold reduction in a spintronic device,
J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich,
Appl. Phys. Lett.
82,
4516
(2003)
Ultrafast terahertz probes of transient conducting and insulating phases in an electron-hole gas,
R. A. Kaindl, M. A. Carnahan, D. Hägele, R. Lövenich, and D. S. Chemla,
Nature
243,
734
(2003)
Exciton dynamics studied via internal THz transitions,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla,
Phys. Stat. Solidi (b)
238,
451
(2003)
(invited)
2002
Semiconductor polarization dynamics from the coherent to the incoherent regime: Theory and experiment,
R. Lövenich, C. W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer,
Phys. Rev. B
66,
045306
(2002)
From coherently excited correlated states to incoherent relaxation processes in semiconductors,
R. Lövenich, C.W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer,
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest.
2002,
270
(2002)
2001
Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich,
Solid State Comm.
120,
73
(2001)
Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
M. Oestreich, J. Hübner, D. Hägele, M. Bender, H. Kalt, P. Klar, W. Heimbrodt, W.W. Rühle, W. Stolz, and K. Eberl,
Festkörperprobleme/Advances in Solid State Physics
41,
173
(2001)
2000
Excitons or no excitons, that is the question,
M. Oestreich, D. Hägele, J. Hübner, W. W. Rühle,
Phys. Stat. Sol. (a)
178,
27
(2000)
1999
Cooling dynamics of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki,
Phys. Rev. B Rapid Comm.
59,
7797
(1999)
Spin injection into semiconductors,
M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn,
Appl. Phys. Lett.
74,
1251
(1999)
Energy loss rate of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki,
Physica B
272,
409
(1999)
Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells,
D. Hägele, M. Oestreich, W. W. Rühle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, and D. Hommel,
Physica B
272,
338
(1999)
When do excitons really exist?,
D. Hägele, J. Hüber, Rühle, and M. Oestreich,
Physica B
272,
328
(1999)
M. R. Hofmann, R. Zimmermann, D. Hägele, M. Oestreich, and W. W. Rühle,
Ultrafast physics in nitrides,
Mater. Sci. Eng. B
59,
141
(1999)
(invited)
1998
Spin transport in GaAs,
D. Hägele, M. Oestreich, W. W. Rühle, N. Nestle, and K. Eberl,
Appl. Phys. Lett.
73,
1580
(1998)
Direct observation of the rotational direction of electron spin precession in semiconductors,
M. Oestreich, D. Hägele, H.C. Schneider, A. Knorr, A. Hansch, S. Hallstein, K. H. Schmidt, K. Köhler, S. W. Koch, and W. W. Rühle,
Solid State Comm.
180,
753
(1998)
Invited talks (first author)
Semiconductor spinelectronics,
D. Hägele,
CSIN-8/ICTF-13, Stockholm
( June 2005 )
Electron spin relaxation in semiconductors,
Daniel Hägele, Stefanie Döhrmann, Jörg Rudolph, and Michael Oestreich,
Festkörperprobleme/Advances in Solid State Physics
45,
253
Hauptvortrag, Jahrestagung der Deutschen Physikalischen Gesellschaft in Berlin, März 2005
Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich,
Technical Digest, Summaries of papers presented at the Quantum Electronics and Laser Science Conference (QELS-2001), Opt. Soc. America
160
(2001)
Spintronics with semiconductors,
Daniel Hägele, Jörg Rudolph, Stefanie Döhrmann, and Michael Oestreich,
Invited Lecture at the 2004 International Conference on MEMs, NANO and Smart Systems (ICMENS 2004) in Banff, Alberta, Canada
(August 2004)
Other publications
Magnetoelectronics enhance memory,
D. Hägele and M. Oestreich,
Physics World
20
(2003)
Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
Michael Oestreich, Jens Hübner, and Daniel Hägele,
in Lecture Notes in Physics
579,
181
Springer 2001 (edited by R. Haug and H. Schoeller)
Original Publications of Dr. Jörg Rudolph
2011
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele,
Phys. Rev. B
84,
153202
(2011)
Long room-temperature electron spin lifetimes in bulk cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Proc. SPIE
7937,
793711
(2011)
2010
Two-dimensional higher order noise spectroscopy up to radio frequencies,
S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele,
Rev. Sci. Instr.
81,
125101
(2010)
Long room-temperature electron spin lifetimes in highly doped cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Appl. Phys. Lett.
97,
062101
(2010)
Temperature dependence of electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Phys. Rev. B
81,
155216
(2010)
2009
Anisotropic electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Appl. Phys. Lett.
95,
192107
(2009)
2008
ZnO/SiO2 microcavity modulator on silicon,
P. D. Batista, B. Drescher, W. Seidel, J. Rudolph, S. Jiao, and P. V. Santos,
Appl. Phys. Lett.
92,
133502
(2008)
Spin-orbit dependence on carrier momentum in (1 1 0) GaAs quantum wells,
O.D.D. Couto Jr., J. Rudolph, F. Iikawa, R. Hey, P.V. Santos,
Physica E
40,
1797
(2008)
2007
Long-Range Exciton Transport by Dynamic Strain Fields in a GaAs Quantum Well,
J. Rudolph, R. Hey, and P. V. Santos,
Phys. Rev. Lett.
99,
047602
(2007)
Anisotropic Spin Transport in (110) GaAs Quantum Wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, and P.V. Santos,
Phys. Rev. Lett.
98,
036603
(2007)
Exciton transport by surface acoustic waves,
J. Rudolph, R. Hey, and P. V. Santos,
Superlattices and Microstructures
41,
293
(2007)
Long-range spin transport in (110) GaAs quantum wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, P.V. Santos, and K. H. Ploog,
AIP Conf. Proceedings
893,
1273
(2007)
2005
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,
J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz,
Appl. Phys. Lett.
87,
241117
(2005)
Electron Spin Relaxation in Semiconductors,
D. Hägele, S. Döhrmann, J. Rudolph, and M. Oestreich,
Adv. in Solid State Phys.
45,
253
(2005)
Design considerations for semiconductor spin lasers,
M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele,
Superlattices and Microstructures
37,
306
(2005)
2004
Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,
S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich,
Phys. Rev. Lett.
93,
147405
(2004)
2003
Circular photogalvanic effect at interband excitation in semiconductor quantum wells,
V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl,
Solid State Comm.
123,
283
(2003)
Laser threshold reduction in a spintronic device,
J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich,
Appl. Phys. Lett.
82,
4516
(2003)