Publications

Submitted Manuscripts

Original Publications of Prof. Dr. Daniel Hägele

2016

DOI    

Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment,
J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, and D. Hägele,
Phys. Rev. B 93, 155204 (2016)

2015

DOI    

Temperature dependence of the electron Landé g-factor in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, D. Hägele and J. Rudolph,
J. Appl. Phys. 118, 225701 (2015)

DOI    

Strain dependent electron spin dynamics in bulk cubic GaN,
A. Schaefer, J. H. Buß, T. Schupp, A. Zado, D. J. As, D. Hägele and J. Rudolph,
AIP Journal of Applied Physics 117, 093906 (2015)

DOI    

Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples,
J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, S. Salomon, A. Ludwig and D. Hägele,
AIP Appl. Phys. Lett. 106, 032408 (2015)

2014

DOI    

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature,
J. H. Buß, A. Schaefer, T. Schupp, D. J. As, D. Hägele and J. Rudolph,
Appl. Phys. Lett. 105, 182404 (2014)

DOI    

Electron Spin Dynamics in GaN,
Jörg Rudoph, Jan Heye Buß and Daniel Hägele,
Physica Status Solidi B 251, 1850 (2014)

DOI    

Discrete-time windows with minimal RMS bandwidth for given RMS temporal width,
Sebastian Starosielec and Daniel Hägele,
Signal Processing 102, 240 (2014)

2013

DOI    

Dyakonov-Perel electron spin relaxation in a highly degenerate wurtzite semiconductor,
J. Rudolph, J.H. Buß, F. Semond, and D. Hägele,
AIP Conf. Proceedings 1566, 361 (2013)

DOI    

Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,
J. H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D. Wieck, and D. Hägele,
Appl. Phys. Lett. 103, 092401 (2013)

DOI    

Long electron spin coherence in ion-implanted GaN: The role of localization,
J. H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, and D. Hägele,
Appl. Phys. Lett. 102, 192102 (2013)

DOI    

Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele ,
Proc. of SPIE Vol. 86, 2386230B-2 (2013)

2012

DOI    

Electron spin orientation under in-plane optical excitation in GaAs quantum wells,
S. Pfalz, R. Winkler, N. Ubbelohde, D. Hägele, and M. Oestreich,
Phys. Rev. B 86, 165301 (2012)

2011

DOI    

Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele,
Phys. Rev. B 84, 153202 (2011)

DOI    

Long room-temperature electron spin lifetimes in bulk cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Proc. SPIE 7937, 793711 (2011)

2010

DOI    

Two-dimensional higher order noise spectroscopy up to radio frequencies,
S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele,
Rev. Sci. Instr. 81, 125101 (2010)

DOI    

Long room-temperature electron spin lifetimes in highly doped cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Appl. Phys. Lett. 97, 062101 (2010)

DOI    

Temperature dependence of electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Phys. Rev. B 81, 155216 (2010)

2009

DOI    

Anisotropic electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Appl. Phys. Lett. 95, 192107 (2009)

DOI    

Towards Bose-Einstein condensation of semiconductor excitons: The biexciton polarization effect,
D. Hägele, S. Pfalz and M. Oestreich,
Phys. Rev. Lett. 103, 146402 (2009)

DOI    

Temperature-dependent electron Landé g factor and the interband matrix element of GaAs,
J. Hübner, S. Döhrmann, D. Hägele and M. Oestreich,
Phys. Rev. B 79, 193307 (2009)

DOI     arXiv.org

Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan and D. S. Chemla,
Phys. Rev. B 79, 045320 (2009)

2008

DOI    

Ultrafast Spin Noise Spectroscopy,
S. Starosielec and D. Hägele,
Appl. Phys. Lett. 93, 051116 (2008)

DOI    

Ultrafast THz spectroscopy of excitons in multi-component carrier gases,
R. A. Kaindl, M. A. Carnahan, D. Hägele and D. S. Chemla,
Advances in Solid State Physics 47, 191 (2008)

2007

DOI     arXiv.org

Proof of the cases p ≤ 7 of the Lieb-Seiringer formulation of the Bessis-Moussa-Villani conjecture,
D. Hägele,
J. Stat. Phys. 127, 1167 (2007)

DOI    

Applications of ultrafast terahertz pulses for intra-excitonic spectroscopy of quasi-2D electron-hole gases,
R. A. Kaindl, M. A. Carnahan, D. Hagele, and D.S. Chemla,
J. Nanoelectron. Optoelectron. 2, 83 (2007)

2006

DOI    

Comment on "Electrically injected spin-polarized vertical-cavity surface-emitting lasers [Appl. Phys. Lett. 87, 091108 (2005)]",
D. Hägele and M. Oestreich,
Appl. Phys. Lett. 88, 056101 (2006)

DOI    

Ultrafast THz spectroscopy of correlated electrons: from excitons to Cooper pairs,
R. A. Kaindl, R. Huber, B. A. Schmidt, M. A. Carnahan, D. Hägele, and D. S. Chemla,
Phys. Stat. Solidi (b) 243, 2414 (2006)

2005

DOI    

Room temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,
J. Rudolph, S. Döhrmann, D. Hägele, W. Stolz, and M. Oestreich,
Appl. Phys. Lett. 87, 241117 (2005)

DOI    

Electron Spin Relaxation in Semiconductors,
D. Hägele, S. Döhrmann, J. Rudolph and M. Oestreich,
Advances in Solid State Physics 45, 253 (2005)

DOI    

Spin noise spectroscopy in GaAs,
M. Oestreich, M. Römer, R. J. Haug, and D. Hägele,
Phys. Rev. Lett. 95, 216603 (2005)

DOI    

Optical orientation of electron spins in GaAs quantum wells,
S. Pfalz, R. Winkler, T. Nowitzki, D. Reuter, A. D. Wieck, D. Hägele, and M. Oestreich,
Phys. Rev. B 71, 165305 (2005)

DOI    

Signatures of stimulated bosonic exciton-scattering in semiconductor luminescence,
D. Hägele, S. Pfalz, and M. Oestreich,
Solid State Comm. 134, 171 (2005)

DOI    

Design considerations for semiconductor spin lasers,
M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele,
Superlattices and Microstructures 37, 306 (2005) (invited)

2004

DOI    

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,
S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich,
Phys. Rev. Lett. 93, 147405 (2004)

DOI    

Terahertz probes of transient conducting and insulating phases in quasi-2D electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla,
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics 2004, 503 (2004)

2003

DOI    

Circular photogalvanic effect at inter­band excitation in semiconductor quantum wells,
V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl,
Solid State Comm. 123, 283 (2003)

DOI    

Laser threshold reduction in a spintronic device,
J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich,
Appl. Phys. Lett. 82, 4516 (2003)

DOI    

Ultrafast terahertz probes of transient conducting and insulating phases in an electron­-hole gas,
R. A. Kaindl, M. A. Carnahan, D. Hägele, R. Lövenich, and D. S. Chemla,
Nature 243, 734 (2003)

DOI    

Exciton dynamics studied via internal THz transitions,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla,
Phys. Stat. Solidi (b) 238, 451 (2003) (invited)

2002

DOI    

Semiconductor polarization dynamics from the coherent to the incoherent regime: Theory and experiment,
R. Lövenich, C. W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer,
Phys. Rev. B 66, 045306 (2002)

DOI    

From coherently excited correlated states to incoherent relaxation processes in semiconductors,
R. Lövenich, C.W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer,
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. 2002, 270 (2002)

2001

DOI    

Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich,
Solid State Comm. 120, 73 (2001)

Link    

Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
M. Oestreich, J. Hübner, D. Hägele, M. Bender, H. Kalt, P. Klar, W. Heimbrodt, W.W. Rühle, W. Stolz, and K. Eberl,
Festkörperprobleme/Advances in Solid State Physics 41, 173 (2001)

2000

DOI    

Excitons or no excitons, that is the question,
M. Oestreich, D. Hägele, J. Hübner, W. W. Rühle,
Phys. Stat. Sol. (a) 178, 27 (2000)

1999

DOI    

Cooling dynamics of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki,
Phys. Rev. B Rapid Comm. 59, 7797 (1999)

DOI    

Spin injection into semiconductors,
M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn,
Appl. Phys. Lett. 74, 1251 (1999)

DOI    

Energy loss rate of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki,
Physica B 272, 409 (1999)

DOI    

Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells,
D. Hägele, M. Oestreich, W. W. Rühle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, and D. Hommel,
Physica B 272, 338 (1999)

DOI    

When do excitons really exist?,
D. Hägele, J. Hüber, Rühle, and M. Oestreich,
Physica B 272, 328 (1999)

DOI    

M. R. Hofmann, R. Zimmermann, D. Hägele, M. Oestreich, and W. W. Rühle,
Ultrafast physics in nitrides,
Mater. Sci. Eng. B 59, 141 (1999) (invited)

1998

DOI    

Spin transport in GaAs,
D. Hägele, M. Oestreich, W. W. Rühle, N. Nestle, and K. Eberl,
Appl. Phys. Lett. 73, 1580 (1998)

DOI    

Direct observation of the rotational direction of electron spin precession in semiconductors,
M. Oestreich, D. Hägele, H.­C. Schneider, A. Knorr, A. Hansch, S. Hallstein, K. H. Schmidt, K. Köhler, S. W. Koch, and W. W. Rühle,
Solid State Comm. 180, 753 (1998)

Invited talks (first author)

Semiconductor spinelectronics,
D. Hägele,
CSIN-8/ICTF-13, Stockholm ( June 2005 )

DOI    

Electron spin relaxation in semiconductors,
Daniel Hägele, Stefanie Döhrmann, Jörg Rudolph, and Michael Oestreich,
Festkörperprobleme/Advances in Solid State Physics 45, 253 Hauptvortrag, Jahrestagung der Deutschen Physikalischen Gesellschaft in Berlin, März 2005

DOI    

Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich,
Technical Digest, Summaries of papers presented at the Quantum Electronics and Laser Science Conference (QELS-2001), Opt. Soc. America 160 (2001)

Spintronics with semiconductors,
Daniel Hägele, Jörg Rudolph, Stefanie Döhrmann, and Michael Oestreich,
Invited Lecture at the 2004 International Conference on MEMs, NANO and Smart Systems (ICMENS 2004) in Banff, Alberta, Canada (August 2004)

Other publications

Link    

Magnetoelectronics enhance memory,
D. Hägele and M. Oestreich,
Physics World 20 (2003)

Link    

Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
Michael Oestreich, Jens Hübner, and Daniel Hägele,
in Lecture Notes in Physics 579, 181 Springer 2001 (edited by R. Haug and H. Schoeller)

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Original Publications of Dr. Jörg Rudolph

2016

DOI    

Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment,
J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, and D. Hägele,
Phys. Rev. B 93, 155204 (2016)

2015

DOI    

Temperature dependence of the electron Landé g-factor in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, D. Hägele and J. Rudolph,
J. Appl. Phys. 118, 225701 (2015)

DOI    

Strain dependent electron spin dynamics in bulk cubic GaN,
A. Schaefer, J. H. Buß, T. Schupp, A. Zado, D. J. As, D. Hägele and J. Rudolph,
AIP Journal of Applied Physics 117, 093906 (2015)

DOI    

Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples,
J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, S. Salomon, A. Ludwig and D. Hägele,
AIP Appl. Phys. Lett. 106, 032408 (2015)

2014

DOI    

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature,
J. H. Buß, A. Schaefer, T. Schupp, D. J. As, D. Hägele and J. Rudolph,
Appl. Phys. Lett. 105, 182404 (2014)

DOI    

Electron Spin Dynamics in GaN,
Jörg Rudoph, Jan Heye Buß and Daniel Hägele,
Physica Status Solidi B 251, 1850 (2014)

2013

DOI    

Dyakonov-Perel electron spin relaxation in a highly degenerate wurtzite semiconductor,
J. Rudolph, J.H. Buß, F. Semond, and D. Hägele,
AIP Conf. Proceedings 1566, 361 (2013)

DOI    

Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,
J. H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D. Wieck, and D. Hägele,
Appl. Phys. Lett. 103, 092401 (2013)

DOI    

Long electron spin coherence in ion-implanted GaN: The role of localization,
J. H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, and D. Hägele,
Appl. Phys. Lett. 102, 192102 (2013)

DOI    

Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele ,
Proc. of SPIE Vol. 86, 2386230B-2 (2013)

2011

DOI    

Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele,
Phys. Rev. B 84, 153202 (2011)

DOI    

Long room-temperature electron spin lifetimes in bulk cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Proc. SPIE 7937, 793711 (2011)

2010

DOI    

Two-dimensional higher order noise spectroscopy up to radio frequencies,
S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele,
Rev. Sci. Instr. 81, 125101 (2010)

DOI    

Long room-temperature electron spin lifetimes in highly doped cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Appl. Phys. Lett. 97, 062101 (2010)

DOI    

Temperature dependence of electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Phys. Rev. B 81, 155216 (2010)

2009

DOI    

Anisotropic electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele,
Appl. Phys. Lett. 95, 192107 (2009)

2008

DOI    

ZnO/SiO2 microcavity modulator on silicon,
P. D. Batista, B. Drescher, W. Seidel, J. Rudolph, S. Jiao, and P. V. Santos,
Appl. Phys. Lett. 92, 133502 (2008)

DOI    

Spin-orbit dependence on carrier momentum in (1 1 0) GaAs quantum wells,
O.D.D. Couto Jr., J. Rudolph, F. Iikawa, R. Hey, P.V. Santos,
Physica E 40, 1797 (2008)

2007

DOI    

Long-Range Exciton Transport by Dynamic Strain Fields in a GaAs Quantum Well,
J. Rudolph, R. Hey, and P. V. Santos,
Phys. Rev. Lett. 99, 047602 (2007)

DOI    

Anisotropic Spin Transport in (110) GaAs Quantum Wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, and P.V. Santos,
Phys. Rev. Lett. 98, 036603 (2007)

DOI    

Exciton transport by surface acoustic waves,
J. Rudolph, R. Hey, and P. V. Santos,
Superlattices and Microstructures 41, 293 (2007)

DOI    

Long-range spin transport in (110) GaAs quantum wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, P.V. Santos, and K. H. Ploog,
AIP Conf. Proceedings 893, 1273 (2007)

2005

DOI    

Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,
J. Rudolph, S. Döhrmann, D. Hägele, M. Oestreich, and W. Stolz,
Appl. Phys. Lett. 87, 241117 (2005)

DOI    

Electron Spin Relaxation in Semiconductors,
D. Hägele, S. Döhrmann, J. Rudolph, and M. Oestreich,
Adv. in Solid State Phys. 45, 253 (2005)

DOI    

Design considerations for semiconductor spin lasers,
M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele,
Superlattices and Microstructures 37, 306 (2005)

2004

DOI    

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,
S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich,
Phys. Rev. Lett. 93, 147405 (2004)

2003

DOI    

Circular photogalvanic effect at inter­band excitation in semiconductor quantum wells,
V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl,
Solid State Comm. 123, 283 (2003)

DOI    

Laser threshold reduction in a spintronic device,
J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich,
Appl. Phys. Lett. 82, 4516 (2003)

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